US Patent Issued to NATIONAL YANG MING CHIAO TUNG UNIVERSITY on July 22 for "Gallium nitride transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,375, issued on July 22, was assigned to NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu, Taiwan).

"Gallium nitride transistor" was invented by Edward Yi Chang (Hsinchu County, Taiwan) and Jui-Sheng Wu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A GaN transistor is provided, which comprises: a substrate; a GaN layer disposed on the substrate; a barrier layer disposed on the GaN layer; a source electrode disposed on the barrier layer; a drain electrode disposed on the barrier layer; a composite dielectric layer disposed on the barrier layer and comprising a first seed layer and a La-doped HZO layer, wherein the first seed layer co...