ALEXANDRIA, Va., June 9 -- United States Patent no. 12,290,010, issued on April 29, was assigned to National Yang Ming Chiao Tung University (Hsinchu, Taiwan).
"Method for manufacturing a conductive bridging memory device" was invented by Po-Tsun Liu (Hsinchu, Taiwan), Chih-Chieh Hsu (Taoyuan, Taiwan) and Kai-Jhih Gan (Kaohsiung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a conductive bridging memory device includes the following steps. First, a bottom electrode is formed on a substrate. Next, a switching layer is formed on the bottom electrode. The switching layer is made of a semiconducting metal oxide and free of gallium. Then, a surface of the switching layer is subj...