ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,194, issued on Sept. 30, was assigned to NATIONAL TSING HUA UNIVERSITY (Hsinchu, Taiwan).
"Resistive random access memory unit with one-way conduction characteristic and fabricating method thereof" was invented by Ya-Chin King (Hsinchu, Taiwan), Chrong-Jung Lin (Hsinchu, Taiwan), Yu-Cheng Lin (New Taipei, Taiwan) and Yao-Hung Huang (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A fabricating method of a resistive random access memory unit with one-way conduction characteristic includes performing an initializing step, a forming step and a reverse resetting step. The initializing step includes providing the resistive random access me...