US Patent Issued to NATIONAL TSING HUA UNIVERSITY on March 25 for "Three-dimensional resistive random access memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,545, issued on March 25, was assigned to NATIONAL TSING HUA UNIVERSITY (Hsinchu, Taiwan).

"Three-dimensional resistive random access memory structure" was invented by Ya-Chin King (Hsinchu, Taiwan), Chrong-Jung Lin (Hsinchu, Taiwan) and Yao-Hung Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional resistive random access memory structure includes a base layer, a first layer, a second layer, a third layer and a fourth layer. The first layer includes two first conductive layers and a first via. One of the two first conductive layers is electrically connected between the base layer and the first via. The second lay...