US Patent Issued to NATIONAL TSING HUA UNIVERSITY on June 17 for "Electrode structure and quantum dot electroluminescent device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,366, issued on June 17, was assigned to NATIONAL TSING HUA UNIVERSITY (Hsinchu, Taiwan).

"Electrode structure and quantum dot electroluminescent device" was invented by Hsueh-Shih Chen (Hsinchu, Taiwan) and Shuan Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrode structure is disclosed. The electrode structure consists of a seed layer, an electrode layer formed on the seed layer and a cover layer formed on the electrode layer. This electrode structure is for application in the manufacture of a quantum dots electroluminescent device, so as to act as an anode electrode or a cathode electrode of the QD electroluminescent ...