US Patent Issued to National Institutes for Quantum Science and Technology on Aug. 12 for "Layered structure, magnetoresistive device using the same, and method of fabricating layered structure" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,805, issued on Aug. 12, was assigned to National Institutes for Quantum Science and Technology (Chiba, Japan).

"Layered structure, magnetoresistive device using the same, and method of fabricating layered structure" was invented by Songtian Li (Chiba, Japan) and Seiji Sakai (Chiba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A layered structure which achieves both high spin polarization and low electrical resistance is provided. The layered structure includes a Heusler alloy, and graphene that is in direct contact with the surface of the Heusler alloy. Such a layered structure is fabricated by forming a thin film of the Heusler alloy over a...