US Patent Issued to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY on May 27 for "Graphite thin film/silicon substrate laminated assembly, process for producing the same, and substrate for enhanced heat discharge type electronic devices" (Japanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,778, issued on May 27, was assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).

"Graphite thin film/silicon substrate laminated assembly, process for producing the same, and substrate for enhanced heat discharge type electronic devices" was invented by Masataka Hasegawa (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a laminated assembly dedicated to an enhanced heat discharge type electronic device application by providing an enhanced thermal performance to a silicon device. A graphite thin film/silicon substrate laminated assembly is provided by cleaning the surfaces of a smoot...