US Patent Issued to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY on May 20 for "Ferroelectric thin film, electronic element using name, and method for manufacturing ferroelectric thin film" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,063, issued on May 20, was assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).

"Ferroelectric thin film, electronic element using name, and method for manufacturing ferroelectric thin film" was invented by Masato Uehara (Tosu, Japan), Morito Akiyama (Tosu, Japan), Hiroshi Yamada (Tosu, Japan), Hiroshi Funakubo (Tokyo), Takao Shimizu (Tokyo) and Shinnosuke Yasuoka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stabili...