US Patent Issued to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY on June 3 for "Microwave plasma treatment device" (Japanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,085, issued on June 3, was assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).

"Microwave plasma treatment device" was invented by Hideaki Yamada (Ikeda, Japan), Akiyoshi Chayahara (Ikeda, Japan) and Yoshiaki Mokuno (Ikeda, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microwave plasma treatment device includes a resonator including a container; a single microwave oscillation source that outputs a reference microwave; a waveguide that connects the microwave oscillation source and the resonator to each other; and a phase control mechanism that generates a modified microwave having a phase different from a pha...