US Patent Issued to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY on June 24 for "Semiconductor laser" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,319, issued on June 24, was assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).

"Semiconductor laser" was invented by Takahiro Nakamura (Tsukuba, Japan), Ryunosuke Kuroda (Tsukuba, Japan), Hidefumi Akiyama (Tokyo), Changsu Kim (Tokyo), Takashi Ito (Tokyo) and Hidekazu Nakamae (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor laser including: an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the se...