ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,366, issued on Aug. 26, was assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (Tokyo).
"Spin qubit-type semiconductor device and integrated circuit thereof" was invented by Shota Iizuka (Ibaraki, Japan), Takahiro Mori (Ibaraki, Japan), Kimihiko Kato (Ibaraki, Japan), Atsushi Yagishita (Ibaraki, Japan) and Tetsuya Ueda (Ibaraki, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a spin qubit-type semiconductor device capable of achieving both high-speed spin manipulation and high integration, and an integrated circuit for the spin qubit-type semiconductor device. The spin qubit-type semiconductor de...