ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,432, issued on Oct. 7, was assigned to National Cheng Kung University (Tainan, Taiwan).
"Bismuth-based modified electrode, manufacturing method thereof and use thereof" was invented by Chia-yu Lin (Tainan, Taiwan), Chia-sheng Su (Tainan, Taiwan), Chia-hui Yen (Tainan, Taiwan), Shih-ching Huang (Tainan, Taiwan) and Wei-hsin Lu (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A modified electrode, manufacturing method thereof and use thereof are provided. The manufacturing method includes steps of soaking a copper substrate in a solution to obtain a BiOI/copper(I) iodide, BiOI/copper(I) iodide/metallic bismuth, and copper(I) iodide/metall...