US Patent Issued to National Cheng Kung University on Oct. 28 for "Method for reactive ion etching" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,454,647, issued on Oct. 28, was assigned to National Cheng Kung University (Tainan, Taiwan).

"Method for reactive ion etching" was invented by Tse-Ming Chen (Tainan, Taiwan), Chiu-Hua Huang (Tainan, Taiwan), Ching-Hua Kao (Tainan, Taiwan) and Yu-Chiang Hsieh (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for reactive ion etching includes placing a film in a vacuum chamber, introducing an etching gas, performing reactive ion etching for a first duration, stopping the reactive ion etching and extracting the remaining gas in a second duration so that the chamber reaches a high-clean state with a pressure below 0.1 Pa, and repeating...