US Patent Issued to National Central University on Dec. 16 for "Silicon carbide substrate or substrate processing method" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,676, issued on Dec. 16, was assigned to National Central University (Taoyuan, Taiwan).

"Silicon carbide substrate or substrate processing method" was invented by Tien-Hsi Lee (Tao-Yuan, Taiwan), Chun-Huang Wu (Tao-Yuan, Taiwan), Yu-Sheng Chiou (Tao-Yuan, Taiwan), Shu-Cheng Li (Tao-Yuan, Taiwan), Wei-Chi Huang (Tao-Yuan, Taiwan) and Yu-Tang Lin (Tao-Yuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method includes providing a substrate, wherein the substrate has a surface and a bottom surface opposite to each other, the substrate is defined with a predetermined area, the predetermined area is defined with a predetermi...