US Patent Issued to NANYA TECHNOLOGY on Sept. 9 for "Semiconductor structure having contact plug and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,785, issued on Sept. 9, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure having contact plug and method of manufacturing the same" was invented by Zih-Hong Yang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The method includes forming an insulation structure over a semiconductor substrate, the insulation structure defining a trench having a trench width. The method also includes forming a first conductive material layer in the trench and over an upper surface of the insulation structure, wherein a...