US Patent Issued to NANYA TECHNOLOGY on Sept. 9 for "Method for manufacturing memory device having word line with dual conductive materials" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,292, issued on Sept. 9, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for manufacturing memory device having word line with dual conductive materials" was invented by Yu-Ping Chen (New Taipei, Taiwan) and Jhen-Yu Tsai (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for manufacturing a memory device having a word line (WL) with dual conductive materials. The method includes steps of providing a semiconductor substrate with an active area defined adjacent to a surface of the semiconductor substrate; forming a recess extending from the surface into the semiconductor sub...