US Patent Issued to NANYA TECHNOLOGY on Sept. 30 for "Semiconductor device with peripheral gate structure and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,904, issued on Sept. 30, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with peripheral gate structure and method for fabricating the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including an array area and a peripheral area; and a peripheral gate structure including: a peripheral gate dielectric layer inwardly positioned in the peripheral area of the substrate and including a U-shaped cross-sectional pro...