US Patent Issued to NANYA TECHNOLOGY on Sept. 30 for "Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,427, issued on Sept. 30, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure with liner layer having tapered sidewall and method for preparing the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a spacer structure disposed in the second dielectric layer, and a conductive structure penetrating through the second dielectric layer and e...