US Patent Issued to NANYA TECHNOLOGY on Sept. 30 for "Semiconductor device structure having channel layer with reduced aperture and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,905, issued on Sept. 30, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device structure having channel layer with reduced aperture and method for manufacturing the same" was invented by Yu Xiao (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and method for manufacturing the same are provided. The semiconductor device structure includes a substrate, a word line, a channel layer, and a bit line. The word line is disposed on the substrate. The channel layer is surrounded by the word line. The bit line is disposed on the channel layer. The channel layer has a first portion ...