US Patent Issued to NANYA TECHNOLOGY on Sept. 30 for "Method of preparing semiconductor structure having low dielectric constant layer" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,899, issued on Sept. 30, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of preparing semiconductor structure having low dielectric constant layer" was invented by Yu-Kai Lu (Chiayi, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of preparing a semiconductor structure. The method includes providing a conductive film; disposing a barrier layer over the conductive film; disposing a first dielectric layer over the barrier layer; disposing a patterned hard mask over the first dielectric layer; and removing a portion of the first dielectric layer exposed through the patterned hard mas...