US Patent Issued to NANYA TECHNOLOGY on Sept. 23 for "Buried gate semiconductor device having a dielectric layer between two electrodes" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,339, issued on Sept. 23, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Buried gate semiconductor device having a dielectric layer between two electrodes" was invented by Jhen-Yu Tsai (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes a lower gate electrode, an upper gate electrode over the lower gate electrode and a first dielectric layer partially disposed between the lower gate electrode and the upper gate elect...