ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,421, issued on Sept. 2, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Semiconductor device with work function layer" was invented by Tse-Yao Huang (Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device. The semiconductor device includes a substrate; a peripheral gate structure including: a peripheral gate insulating layer inwardly positioned in the substrate and including a U-shaped cross-sectional profile, a peripheral work function layer positioned on the peripheral gate insulating layer and including a recess, a first peripheral interconnect layer positioned on the p...