US Patent Issued to NANYA TECHNOLOGY on Sept. 16 for "Semiconductor device with contact structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,982, issued on Sept. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with contact structure" was invented by Chih-Hsuan Yeh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device with a contact structure. The semiconductor device includes a bottom dielectric layer positioned on a substrate; a bottom conductive layer positioned in the bottom dielectric layer; an etch stop layer positioned on the bottom conductive layer; a first inter-dielectric layer positioned on the etch stop layer; and a contact structure including a body portion positioned al...