US Patent Issued to NANYA TECHNOLOGY on Sept. 16 for "Method of manufacturing semiconductor device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,856, issued on Sept. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor device structure" was invented by Shih-Yuan Ma (New Taipei, Taiwan) and Yung-Chuan Yeh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device structure is provided. The method includes: providing a substrate; forming a photoresist layer on the substrate; patterning the photoresist layer to form a patterned photoresist layer; forming a pitch adjustment layer on the patterned photoresist layer to define a mask pattern; and determining whether the mask pattern meets a spe...