US Patent Issued to NANYA TECHNOLOGY on Sept. 16 for "Method for manufacturing semiconductor device including capacitor structure having lower electrode with different lengths" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,062, issued on Sept. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for manufacturing semiconductor device including capacitor structure having lower electrode with different lengths" was invented by Wei-Jie Lin (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a substrate; forming a lower supporting layer on the substrate; forming an upper supporting layer on the lower supporting layer, wherein the upper supporting layer defines an opening; and forming a lower electrode within the opening of the u...