ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,794, issued on Sept. 16, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Memory device" was invented by Chien Yu Chen (New Taipei, Taiwan) and Po-Jen Yang (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes a first training circuit and a second training circuit. The first training circuit is configured to generate a first clock signal having a first pulse width according a command address (CA) training signal. The second training circuit is coupled to the first training circuit and is configured to adjust the first pulse width of the first clock signal to output a ...