ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,798, issued on Oct. 7, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Voltage regulator and memory device" was invented by Chih-Jen Chen (Kaohsiung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a voltage regulator and a memory device. The voltage regulator includes a voltage generator and a bias circuit. The bias circuit dynamically adjusts a bias voltage based on a power saving mode signal of the memory device. The voltage generator adjusts a bias current of the voltage generator based on the bias voltage, wherein the bias current affects a slew rate of a target voltage. The voltage generator generates...