US Patent Issued to NANYA TECHNOLOGY on Oct. 7 for "Semiconductor structure having dielectric liner and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,081, issued on Oct. 7, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure having dielectric liner and method of manufacturing the same" was invented by Feng-Wen Hsu (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure having dielectric liner and a manufacturing method of the semiconductor structure. The semiconductor structure includes a substrate; a first bit line structure, disposed over the substrate, comprising a first conductive layer, a second conductive layer disposed over the first conductive layer, and a first dielectric layer disposed...