US Patent Issued to NANYA TECHNOLOGY on Oct. 7 for "Method for preparing semiconductor device with air gap" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,040, issued on Oct. 7, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing semiconductor device with air gap" was invented by Liang-Pin Chou (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a semiconductor device, includes: forming a first dielectric structure and a second dielectric structure over a semiconductor substrate; forming a conductive material over the first dielectric structure and the second dielectric structure, wherein the conductive material extends into a first opening between the first dielectric structure and the second dielectric structure; partially removing the...