US Patent Issued to NANYA TECHNOLOGY on Oct. 7 for "Manufacturing method memory device having laterally extending capacitors of different lengths and levels" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,613, issued on Oct. 7, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Manufacturing method memory device having laterally extending capacitors of different lengths and levels" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate; disposing a first insulating layer over the semiconductor substrate; disposing a first bottom electrode over the first insulating layer; disposing a first dielectric layer over the first bottom electrode; removing a portion of the...