US Patent Issued to NANYA TECHNOLOGY on Oct. 7 for "Composite interconnect semiconductor device structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,088, issued on Oct. 7, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Composite interconnect semiconductor device structure" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a first lower semiconductor structure disposed over a semiconductor substrate. The first lower semiconductor structure has a first sidewall and a second sidewall opposite to the first sidewall. The semiconductor device structure also includes a first upper semiconductor structure covering a top surface and the first sidewall of the first lower semiconductor structure. The first lo...