ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,703, issued on Oct. 28, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Semiconductor device structure including a bonding structure" was invented by Sheng-Fu Huang (New Taipei, Taiwan) and Shing-Yih Shih (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and method for manufacturing the same are provided. The semiconductor device structure includes a substrate, a dielectric structure, a pad, a conductive structure, and a buffer structure. The dielectric structure is disposed on the substrate. The pad is embedded in the dielectric structure. The conductive structure is disposed on the pa...