US Patent Issued to NANYA TECHNOLOGY on Oct. 28 for "Method of manufacturing semiconductor structure having heat dissipation structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,630, issued on Oct. 28, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor structure having heat dissipation structure" was invented by Shing-Yih Shih (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure is provided. The method includes forming a thermal conductive structure embedded within a first passivation layer of a first wafer, and forming a plurality of conductive vias penetrating a first substrate of the first wafer and in contact with the thermal conductive structure. The method further includes forming a first connecting struc...