US Patent Issued to NANYA TECHNOLOGY on Oct. 28 for "Method for manufacturing semiconductor device having buried gate structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,730, issued on Oct. 28, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for manufacturing semiconductor device having buried gate structure" was invented by Jhen-Yu Tsai (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming a trench in a substrate and disposing a lower gate electrode in the trench. The method also includes disposing a first dielectric layer on the lower gate electrode in the trench and partially removing the first dielectric layer to expose a portion of the lower gate electrode."

The patent ...