US Patent Issued to NANYA TECHNOLOGY on Oct. 21 for "Semiconductor device with selection structure and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,008, issued on Oct. 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with selection structure and method for fabricating the same" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first top selection structure and a second top selection structure at a same vertical level as and separated from a main signal pad, and respectively extending along different directions; a first ground layer at the same vertical level as and separated from the main signal pad and the top selection structures; a first bottom selection structure at a vertica...