US Patent Issued to NANYA TECHNOLOGY on Oct. 21 for "Method of manufacturing semiconductor structure comprising edge word line and central word line" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,079, issued on Oct. 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor structure comprising edge word line and central word line" was invented by Yu-Ting Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes: providing a sacrificial structure disposed on a substrate; arranging a photomask to cover the sacrificial structure, wherein the photomask includes a plurality of transparent portions, a plurality of central opaque portions, at least one first edge opaque portio...