US Patent Issued to NANYA TECHNOLOGY on Oct. 14 for "Memory device having ultra-lightly doped region" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,211, issued on Oct. 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory device having ultra-lightly doped region" was invented by Chung-Lin Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a memory device having an ultra-lightly doped region and a manufacturing method of the memory device. The memory device includes a semiconductor substrate including a word line extending into the semiconductor substrate, wherein the semiconductor substrate is defined with a source region, a drain region and an ultra-lightly doped region under the drain region, the word line is disposed betw...