US Patent Issued to NANYA TECHNOLOGY on Nov. 4 for "Method of manufacturing semiconductor structure including a planarization and semiconductor structure thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,090, issued on Nov. 4, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor structure including a planarization and semiconductor structure thereof" was invented by Ying-Cheng Chuang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor structure and a manufacturing method of the semiconductor structure. A substrate is provided, wherein the substrate includes a plurality of pillars, and a top surface of each of the plurality of pillars is a substantially planar surface. A first oxide layer is formed over the substrate conformal to the pillars, wh...