US Patent Issued to NANYA TECHNOLOGY on Nov. 25 for "Semiconductor device with porous layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,649, issued on Nov. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with porous layer and method for fabricating the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a bottom interconnector layer positioned in the substrate; a bottom dielectric layer positioned on the bottom glue layer; an interconnector structure positioned along the bottom dielectric layer and the bottom glue layer, positioned on the bot...