US Patent Issued to NANYA TECHNOLOGY on Nov. 25 for "Method of manufacturing semiconductor structure using multi-layer hard mask" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,657, issued on Nov. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor structure using multi-layer hard mask" was invented by Ying-Cheng Chuang (Taoyuan, Taiwan) and Yu-Ting Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure. A substrate is provided. A multi-layer structure is formed over the substrate, wherein the multi-layer structure includes a semiconductive material layer and an oxide layer over the semiconductive material layer. The oxide layer is patterned to form a first patterned layer....