US Patent Issued to NANYA TECHNOLOGY on Nov. 25 for "Method of manufacturing semiconductor device having island structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,666, issued on Nov. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method of manufacturing semiconductor device having island structure" was invented by Chen-Cheng Chang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device is provided. The method includes: providing a substrate comprising an array region and a peripheral region, wherein the array region and the peripheral region define a stepped structure, performing a deposition process to form a passivation layer over the array region and the peripheral region; performing an etching process to remove a portion of th...