US Patent Issued to NANYA TECHNOLOGY on Nov. 25 for "Memory cell with improved insulating structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,215, issued on Nov. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Memory cell with improved insulating structure" was invented by Chung-Lin Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device. The memory device includes a substrate, a first gate electrode arranged within the substrate, a second gate electrode arranged within the substrate and over the first gate electrode, and an electrical insulating structure separating the substrate, the first gate electrode and the second gate electrode from one another. The memory device further includes a first dielectric lay...