US Patent Issued to NANYA TECHNOLOGY on Nov. 25 for "Buried gate semiconductor device with reduced gate induced drain leakage" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,284, issued on Nov. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Buried gate semiconductor device with reduced gate induced drain leakage" was invented by Jhen-Yu Tsai (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes a lower gate electrode, an upper gate electrode over the lower gate electrode and a first dielectric layer partially disposed between the lower gate electrode and the upper gate electrode. The l...