US Patent Issued to NANYA TECHNOLOGY on Nov. 18 for "Semiconductor device having buried gate structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,806, issued on Nov. 18, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device having buried gate structure" was invented by Jhen-Yu Tsai (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The gate structure includes a lower gate electrode and an upper gate electrode over the lower gate electrode. The gate structure also includes a first barrier layer disposed between the lower gate electrode and the upper gate electrode. The gate structure also includes a first dielectric la...