US Patent Issued to NANYA TECHNOLOGY on Nov. 18 for "Method for manufacturing memory device having a protruding channel structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,714, issued on Nov. 18, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for manufacturing memory device having a protruding channel structure" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a memory device includes: forming an array of memory cells, wherein the memory cells respectively include an access transistor embedded in a semiconductor substrate and a storage capacitor over the semiconductor substrate and coupled to the access transistor; and forming a peripheral circuit around the memory cells, wherein the peripheral circuit includes a first transistor an...