US Patent Issued to NANYA TECHNOLOGY on May 6 for "Semiconductor device with ring-shaped electrode and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,150, issued on May 6, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with ring-shaped electrode and method for preparing the same" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a bottom electrode structure disposed over a semiconductor substrate. The bottom electrode structure includes a first bottom electrode layer, and a second bottom electrode layer surrounding the first bottom electrode layer. The semiconductor device also includes a plurality of insulating portions laterally separating the first bottom electrode layer and the secon...