US Patent Issued to NANYA TECHNOLOGY on May 27 for "Semiconductor structure having heat dissipation structure" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,774, issued on May 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor structure having heat dissipation structure" was invented by Shing-Yih Shih (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a first substrate, a first dielectric layer disposed on the first substrate, a first passivation layer disposed on the first dielectric layer, a second substrate disposed on the first passivation layer, and a second substrate disposed on the first passivation layer. The semiconductor structure further includes a first seal ring embedded ...