ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,578, issued on May 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).
"Semiconductor device with programmable feature" was invented by Hsih-Yang Chiu (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a semiconductor device. The semiconductor device includes a substrate, a first insulative film, a second insulative film, a first electrode, a second electrode, a capping layer, a plurality of first impurity regions and a plurality of second impurity regions. The first insulative film is disposed on the substrate. The second insulative film at least partially surrounds the first insulative fil...