US Patent Issued to NANYA TECHNOLOGY on May 27 for "Semiconductor device and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,571, issued on May 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device and method for manufacturing the same" was invented by Jhen-Yu Tsai (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The trench includes an upper gate electrode, a capping layer on the upper gate electrode and a first dielectric layer partially disposed between the upper gate electrode and the capping layer."

The patent was filed on June 21, 2022, under Application No. 17/844,961.

*For further i...