US Patent Issued to NANYA TECHNOLOGY on May 27 for "Method for preparing semiconductor device with composite passivation structure" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,796, issued on May 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Method for preparing semiconductor device with composite passivation structure" was invented by Shing-Yih Shih (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a conductive pattern formed over a semiconductor substrate, and an interconnect structure formed over the conductive pattern. The semiconductor device also includes a first passivation layer over the conductive pattern; a second passivation layer over the first passivation layer; an interconnect structure disposed over the conductive pattern and in the first p...